Using the computer simulation method it was studied the dependences of nonequilibrium electrons lifetime from concentration of elementary bulk point defects and various complexes of the bulk point defects, which may be present in the n+-p-p+ diode structures based on p-type conductivity boron doped silicon crystals with 10 Ohm-cm resistivity, grown by the Czochralski method. A number of obtained results well correlated with the experimental data related to the effects of photon degradation in solar cells which based on considered type silicon crystals (Si-SC) and influence of a stationary magnetic field on such devices efficiency. Overall, our results provide additional possibility for the evolution features prediction of electronic, and consequently, functional parameters, not only for Si-SC, but also for other devices based on such diode structures. It will allow looking for the most efficient and cost effective ways to optimize their design-technological solutions, and also estimates their reliability and durability level.

Stoichiometric and nitrogen doped SiC nanopowders have been investigated by multi-approaches EPR methods. The paramagnetic intrinsic defects formed in the nanoparticles were studied by cw EPR, field swept electron spin echo, pulsed electron nuclear double resonance and hyperfine sublevel correlation spectroscopy.We observe weak 29Si and 13C superhyperfine couplings with silicon and carbon atoms in the second coordination sphere and beyond indicating a high delocalization of the electronic wave function of the unpaired electron. Additional coupling with protons from presumably clustered hydrogen atoms have been detected. Although nitrogen has been found to be present in the nanomaterials no related shallow donor state was formed.

Optical absorption measurements were used to monitor the thermal annihilation of oxygen vacancies (F-centers) in thermochemically reduced MgO crystals. The annihilation characteristics were sample-dependent and varied strongly with the F-center concentration. Different mechanisms for the destruction of F centers are suggested depending on their concentration.
Solid State Communications, Volume 118, 2001, pp.163-167