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 Найдено научных статей и публикаций: 3, для научной тематики: Point defects


Связанные научные тематики:
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1.

Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon (публикация автора на scipeople)     

R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov - Journal "Functional Materials" , 2017
Using the computer simulation method it was studied the dependences of nonequilibrium electrons lifetime from concentration of elementary bulk point defects and various complexes of the bulk point defects, which may be present in the n+-p-p+ diode...
2.

Intrinsic defects in SiC nanoparticles as studied by pulsed electron paramagnetic resonance (публикация автора на scipeople)   

D.V. Savchenko, A. P¨oppl, J. Hoentsch, E.N. Kalabukhova, Y. Bulois, A. Kassiba - Solid State Communications , 2008
Stoichiometric and nitrogen doped SiC nanopowders have been investigated by multi-approaches EPR methods. The paramagnetic intrinsic defects formed in the nanoparticles were studied by cw EPR, field swept electron spin echo, pulsed electron...
3.

Dynamics of F-center annihilation in thermochemically reduced MgO single crystals (публикация автора на scipeople)      

A. I. Popov, M. A. Monge, R. González, Y. Chen, E. A. Kotomin - Solid State Communications , 2001
Optical absorption measurements were used to monitor the thermal annihilation of oxygen vacancies (F-centers) in thermochemically reduced MgO crystals. The annihilation characteristics were sample-dependent and varied strongly with the F-center...