The impact of defects on the performance of p- and n-side illuminated microcrystalline silicon solar cells is investigated. The absorber layer spin density NS is controlled over some two orders of magnitude by electron bombardment and subsequent annealing steps. At increased NS (between 3x1016 and 1018 cm-3) performance of n-side illuminated cells is much more strongly reduced relative to p-side illuminated cells, particularly with regard to short circuit current density. Quantum efficiency measurements indicate a corresponding strong asymmetry in wavelength-dependence, which has been successfully reproduced by numerical device simulations. / Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Appl. Phys. Lett. 101, 143903 (2012)