Найдено научных статей и публикаций: 1, для научной тематики: AlGaAs Si doping XRD FIR DX-centers
1.
A.V. Glotov, P.V. Seredin, E.P. Domashevskaya [et al.]
- Physica B: Condensed Matter , 2012
AlxGa1-xAs:Si/GaAs(1 0 0) heterostructure and homoepitaxial GaAs:Si/GaAs(1 0 0) structures grown by MOCVD were investigated. The changes observed in our experiments with highly doped AlxGa1-xAs
alloys, led not only to the reconstruction of the electron density and formation of deep levels
(DX-center...
AlxGa1-xAs:Si/GaAs(1 0 0) heterostructure and homoepitaxial GaAs:Si/GaAs(1 0 0) structures grown by MOCVD were investigated. The changes observed in our experiments with highly doped AlxGa1-xAs
alloys, led not only to the reconstruction of the electron density and formation of deep levels
(DX-centers) with subsequent relaxation of the crystal lattice in the alloy, but also indicate at the formation of quaternary AlxGa1-x-ySiy+zAs1-z substitution-type alloy grown on GaAs(1 0 0).
Physica B: Condensed Matter.-2010.- V.405.- I.22.- Pp. 4607–4614.