Найдено научных статей и публикаций: 2   
1.

Tetraacylated lipopolysaccharide of Yersinia pestis can inhibit multiple Toll-like receptor-mediated signaling pathways in human dendritic cells (публикация автора на scipeople)     

Telepnev MV, Klimpel GR, Haithcoat J, Knirel YA, Anisimov AP, Motin VL - J Infect Dis. , 2009
BACKGROUND: Yersinia pestis, the causative agent of plague, showed a temperature-dependent change in lipid A composition, with a reduced degree of acylation when bacteria were grown at 37 degrees C (tetraacylated) versus ambient temperature (hexaacylated). METHODS: Human monocytes and monocyte-derived dendritic cells (DCs) were exposed to Y. pestis grown at 26 degrees C or 37 degrees C, to their corresponding lipopolysaccharides (LPS-26 degrees C or LPS-37 degrees C), and to ligands of different Toll-like receptors (TLRs), such as LPS from Escherichia coli (TLR4), lipoprotein (TLR2), polyinosinic-polycytidylic acid (poly-IC) (TLR9), and their combinations. Production of cytokines was measured, along with expression of surface markers of DC maturation. RESULTS: Y. pestis grown at 37 degrees C or LPS-37 degrees C induced much lower production of cytokines (such as tumor necrosis factor alpha and interleukins 1beta, 10, and 12) by DCs than did Y. pestis grown at 26 degrees C or LPS-26 degrees C. Expression of the surface markers HLA-DR, CD86, and CD40 by DCs was also reduced in response to treatment with LPS-37 degrees C compared with LPS-26 degrees C. Pretreatment of DCs with LPS-37 degrees C inhibited subsequent stimulation with LPS-26 degrees C, control LPS from E. coli, lipoprotein, or poly-IC. CONCLUSIONS: LPS-37 degrees C can inhibit stimulation of DCs not only via TLR4 signaling but also via TLR2 and TLR3. [corrected]
2.

Role of the buffer porous layer and dysprosium doping in GaInP-porGaAs-GaAs heterostructures (публикация автора на scipeople)   

E. P. Domashevskaya, P. V. Seredin, A. V. Glotov [et al.] - Phys. Status Solidi C , 2010
In the samples with porous buffer layer the residual internal stresses caused by the difference in lattice parameters between the surface layer of ternary GaInP alloy and GaAs substrate are redistributed into the porous layer, which in this case plays a role of a “sponge” and completely removes the internal stresses.